Structural Characterization Studies on Semiconducting ZnSnN2 Films using Synchrotron X-ray Diffraction

ZnSnN2;Synchrotron x-ray diffraction;Single crystal;Disorder-Order phase transition;Crystal structure;Reciprocal space maps;Materials Science and Engineering;Physics;Engineering;Science;Applied Physics

Senabulya, NancyKurdak, Cagliyan ;

University of Michigan

关键词: ZnSnN2;    Synchrotron x-ray diffraction;    Single crystal;    Disorder-Order phase transition;    Crystal structure;    Reciprocal space maps;    Materials Science and Engineering;    Physics;    Engineering;    Science;    Applied Physics;   

Others  :  https://deepblue.lib.umich.edu/bitstream/handle/2027.42/138487/nsenab_1.pdf?sequence=1&isAllowed=y

瑞士|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

This work is motivated by the need for new visible frequency direct bandgap semiconductor materials that are earth abundant and low-cost to meet the increasing demand for optoelectronic device applications such as solid state lighting and photovoltaics. Zinc-Tin-Nitride (ZnSnN2), a member of the II-IV nitride semiconductor family has been proposed as an alternative to the more common III-nitride semiconductors for use in optoelectronic devices. This material has been synthesized under optimized conditions using plasma assisted molecular beam epitaxy.Though a lot of research has recently been done computationally to predict the electronic and structural properties of ZnSnN2, experimental verification of these theories in single crystal thin films is lacking and warrants investigation because the accurate determination of the crystal structure of ZnSnN2 is a fundamental prerequisite for controlling and optimizing optoelectronic properties. In this synchrotron x-ray diffraction study, we present experimental validation, through unit cell refinement and 3d reciprocal space maps, of the crystal structure of single domain ZnSnN2 films deposited on (111) Yttria stabilized zirconia (YSZ) and (001) Lithium gallate (LGO) substrates. We find that ZnSnN2 films grown on (111) YSZ can attain both the theoretically predicted disordered wurtzite and ordered orthorhombic Pna21 structures under carefully controlled MBE growth conditions, while films grown on (001) LGO have the ordered Pn21a orthorhombic crystal structure. Through a systematic annealing study, a temperature induced first order structural phase transition from the wurtzite to orthorhombic phase is realized, characterized by the appearance of superstructure reflections in