Fully Integrated High-Performance MEMS Lumped Element Filters for Reconfigurable Radios.

RF MEMS;Lumped Element Filter;UHF;Phase Change Material;GeTe;Reconfigurable Radio;Electrical Engineering;Engineering;Electrical Engineering

Shim, YonghyunSarabandi, Kamal ;

University of Michigan

关键词: RF MEMS;    Lumped Element Filter;    UHF;    Phase Change Material;    GeTe;    Reconfigurable Radio;    Electrical Engineering;    Engineering;    Electrical Engineering;   

Others  :  https://deepblue.lib.umich.edu/bitstream/handle/2027.42/98038/yhshim_1.pdf?sequence=1&isAllowed=y

瑞士|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

In this research, we present RF MEMS filters which address the most challenging performance requirements of modern RF front-end systems, namely multi-band processing capability, low energy consumption, and small size. These filters not only provide a wide tuning range for multiple-band selection, but also offer low loss, high power handling capability, fast tuning speed, and temperature stability. Two different technologies are considered for tunable lumped element filter targeting UHF range. The first technology is a tunable RF MEMS platform based on surface micromachining, enabling fabrication of continuously tuned capacitors, capacitive and ohmic switches, as well as high-Q inductors, all on a single chip. The filter is in a third-order coupled resonator configuration. Continuous electrostatic tuning is achieved using three tunable capacitor banks each consisting of one continuously tunable capacitor and three switched capacitors with pull-in voltage of less than 40V.The center frequency of the filter is tuned from 1GHz to 600MHz while maintaining a 3dB-bandwidth of 13 to 14% and insertion loss of < 3.5dB. The temperature stability of the center frequency from 223K to 323K is > 2%. The filter occupies a small size (1.5 cm x 1.0 cm). This filter shows the best published performance yet in terms of insertion loss, out-of-band rejection, temperature stability, and tuning range.The second technology is based on a new tuning mechanism utilizing phase-change (PC) materials.PC technology has been investigated and adopted in memory industry due to its fast transition time in nano second range, small size, and high resistance change ratio.Although PC materials offer several benefits, they have not been considered for RF applications because of their limited power handling capability and relatively higher on-resistance in their current form. In this work, germanium tellurium (GeTe) is considered as it offers a low on-resistivity and pronounced resistance change ratio of up to 106. To characterize RF properties of GeTe, different types of RF switches have been fabricated and compared. Such PC switches can be monolithically integrated with other micromachined components to implement reconfigurable front-end modules, potentially offering high tuning speed, low loss, high linearity, and small size.