Examination of the Ion Beam Response of III-V Semiconductor Substrates.

Semiconductors;Ion Irradiation;Focused Ion Beam;III-V Semiconductors;Materials Science and Engineering;Engineering;Materials Science and Engineering

Grossklaus, Kevin A.Pan, Xiaoqing ;

University of Michigan

关键词: Semiconductors;    Ion Irradiation;    Focused Ion Beam;    III-V Semiconductors;    Materials Science and Engineering;    Engineering;    Materials Science and Engineering;   

Others  :  https://deepblue.lib.umich.edu/bitstream/handle/2027.42/91437/kgrosskl_1.pdf?sequence=1&isAllowed=y

瑞士|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

This work examines the response of the III-V materials to ion beam irradiation ina series of four experimental studies and describes the observed results in terms of thefundamental materials processes and properties that control ion-induced change in thosecompounds. Two studies investigate the use of Ga+ focused ion beam (FIB) irradiationof III-V substrate materials to create nanostructures. In the first, the creation of FIBinduced group III nanodots on GaAs, InP, InAs, and AlAs is studied. The analysis ofthose results in terms of basic material properties and a simple nanodot growth modelrepresents the first unified investigation of the fundamental processes that drive thenanodot forming behavior of the III-V compounds. The second nanostructure formationstudy reports the discovery and characterization of unique spike-like InAs nanostructures,termed ;;nanospikes,” which may be useful for nanoscale electronic or thermoelectricapplications. A novel method for controlling nanospike formation using InAs/InPheterostructures and film pre-patterning is developed, and the electrical properties ofthese ion erosion created nanostructures are characterized by in-situ TEM nanoprobetesting in a first-of-its-kind examination. The two remaining studies examine methodsfor using ion beam modification of III-V substrates to accommodate lattice-mismatchedfilm growth with improved film properties. The first examines the effects of film growthon a wide range of different FIB created 3-D substrate patterns, and finds that 3-D surfacefeatures and patterns significantly alter film morphology and that growth on or near FIBirradiated regions does not improve film threading defect density. The second substratemodification study examines broad beam ion pre-implantation of GaAs wafers beforeInGaAs film growth, and is the first reported study of III-V substrate pre-implantation.Ar+ pre-implantation was found to enhance the formation of threading defects in InGaAsfilms and so improve their roughness and degree of relaxation. This effect, combinedwith a threading dislocation filtering structure, is anticipated to produce high qualitybuffers for lattice-mismatched film growth.