Event Classification for 3-D Position Sensitive Semiconductor Detectors.

Event Classification;Gamma Ray Detctor;Semiconductor Detector;Pixelated Detector;Photon Interaction;Gamma Ray Spectroscopy;Nuclear Engineering and Radiological Sciences;Engineering;Nuclear Engineering & Radiological Sciences

Anderson, Stephen E.Pozzi, Sara A. ;

University of Michigan

关键词: Event Classification;    Gamma Ray Detctor;    Semiconductor Detector;    Pixelated Detector;    Photon Interaction;    Gamma Ray Spectroscopy;    Nuclear Engineering and Radiological Sciences;    Engineering;    Nuclear Engineering & Radiological Sciences;   

Others  :  https://deepblue.lib.umich.edu/bitstream/handle/2027.42/84631/andste_1.pdf?sequence=1&isAllowed=y

瑞士|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Event-by-event classification of 30 keV to 3 MeV photon interactions in pixelatedCZT and HgI2 detectors has been achieved through analysis of preamplifier outputwaveforms. The methods rely on analysis of the digitized waveforms sampled at 100MSa/s from charge collecting pixels, pixels that neighbor charge collecting pixels,and the cathode. Digital signal processing methods have been developed and optimizedto measure the range of signal features found in the pulse waveforms. Precisemeasurements of these features enable detection of the signatures of photoelectricabsorption, Compton scattering, characteristic X-ray escape, pair production, andcharge sharing events. Experimental data from a digital readout system is usedto demonstrate the value of event classification in improving energy resolution andradiation interaction position. Simulation and experimental validation techniquesdemonstrate the accuracy of the event classification methods. The accuracy of themethods ranged between 12 and 99 percent depending on the interaction type andvalidation method used.