Microstructure of Laterally Overgrown Gan Layers.

Liliental-Weber, Z. ; Cherns, D.

Technical Information Center Oak Ridge Tennessee

关键词: Transmission electron microscopy;    Sampling;    Plan-view;    Cross section;    Microscopy;   

RP-ID  :  DE2005835807

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.