Design of Shallow p-type Dopants in ZnO (Presentation).

Wei, S. H. ; Li, J. ; Yan, Y.

Technical Information Center Oak Ridge Tennessee

关键词: Solar energy;    Binding energy;    Design;    Excitons;    Lasers;   

RP-ID  :  DE2008939510

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.