Nanostructured High Performance Ultraviolet and Blue Light Emitting Diodes for Solid State Lighting. Report for October 1, 2003-September 30, 2004.

Nurmikko, A. V. ; Han, J.

Technical Information Center Oak Ridge Tennessee

关键词: Light emitting diodes;    Crystal structure;    Gallium nitrides;    Efficiency;    Nanostructures;   

RP-ID  :  DE2004834117

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and near ultraviolet for Solid State Lighting applications. Accomplishments in the first 12 month contract period include (1) new means of synthesizing zero- and one-dimensional GaN nanostructures, (2) establishment of the building blocks for making GaN-based microcavity devices, and (3) demonstration of top-down approach to nano-scale photonic devices for enhanced spontaneous emission and light extraction. These include a demonstration of eight-fold enhancement of the external emission efficiency in new InGaN QW photonic crystal structures. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.