Fundamental Science of High-density Fluorocarbon Plasmas.

Oehrlein, G. S. ; Anderson, H. M. ; Cecchi, J. L.

Technical Information Center Oak Ridge Tennessee

关键词: Carbon fluroides;    Plasma;    Masking;    Etching;    Chemical composition;   

RP-ID  :  DE2004810328

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

This report describes the results we obtained during the two and a half year of our work on the contract 'Fundamental Science of High-Density Fluorocarbon Plasmas.' In this program we established critical elements of the scientific knowledge base of high-density fluorocarbon plasmas used for SiO(sub 2) patterning. To this end we characterized the species that exist in the gas phase and the processes that occur at relevant surfaces in contact with the plasma using complementary diagnostic instrumentation for plasma and surface characterization at two universities. By moving diagnostics from one university to the other, the full spectrum of diagnostics was applied to a single plasma reactor and fluorocarbon plasma etching process. The results of these measurements were correlated with data obtained when patterning SiO(sub 2) using identical conditions. In parallel, a reactive beam scattering system was employed to establish the consequences of the interaction of mass- and energy-resolved low energy ions with SiO(sub 2) and resist surfaces.