Simulation of Neutron Radiation Damage in Silicon Semiconductor Devices.

Shadid, J. N. ; Hoekstra, R. J. ; Hennigan, G. L. ; Castro, J. P. ; Fixel, D. A.

Technical Information Center Oak Ridge Tennessee

关键词: Neutrons;    Radiations;    Si semiconductor detectors;    A Codes;    Semiconductor devices;   

RP-ID  :  DE2008934581

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

A code, Charon, is described which simulates the effects that neutron damage has on silicon semiconductor devices. The code uses a stabilized, finite-element discretization of the semiconductor drift-diffusion equations. The mathematical model used to simulate semiconductor devices in both normal and radiation environments will be described. Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for each of the defect species. Additionally, details are given describing how Charon can efficiently solve very large problems using modern parallel computers. Comparison between Charon and experiment will be given, as well as comparison with results from commercially-available TCAD codes.