Distribution and Chemical State of Cu-rich Clusters in Silicon.

Buonassisi, T. ; Istratov, A. A. ; Weber, E. R. ; Marcus, M. A. ; Heuer, M. ; Ciszek, T. F. ; Lai, B. ; Cai, Z.

Technical Information Center Oak Ridge Tennessee

关键词: Silicon solar cells;    Crystal growth;    Impurities;    Absorption;    Contamination;   

RP-ID  :  DE200415009893

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

The chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurements revealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the -XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.