Correlation of Point Defects in CdZnTe with Charge Transport: Application to Room-Temperature X-Ray and Gamma Ray-Detectors.

Giles, N. C.

Technical Information Center Oak Ridge Tennessee

关键词: Point sources;    Shallow donors;    Shallow acceptors;    Deeper acceptors;    Zinc molar fraction;   

RP-ID  :  DE2004821145

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

The primary goal of this project has been to characterize and identify point defects (e.g., impurities, vacancies, vacancy-impurity complexes, etc.) in CdZnTe and determine the mechanisms by which these defects influence the carrier(mu)(tau)products. Special attention is given to the role of shallow donors, shallow acceptors, and deeper acceptors. There are two experimental focus areas in the project: (1) liquid-helium photoluminescence (PL) and PL excitation spectroscopy are used to identify and characterize donors and acceptors and to determine zinc molar fraction; and (2) electron paramagnetic resonance (EPR) and photoinduced EPR experiments are performed at liquid-helium temperature to identify paramagnetic point defects and to determine the concentration of these defects. Results from the two experimental focus areas are correlated with detector performance parameters (e.g., electron and hole(mu)(tau) products), crystal growth conditions, and microstructure analyses.