Measurement of the Auger Recombination Rate in p-Type 0.54-eV GaInAsSb by Time-Resolved Photoluminence.

Anikeev, S. ; Donetsky, D. ; Belenky, G. ; Luryi, S. ; Wang, C. A. ; Borrego, J. M. ; Nichols, G.

Technical Information Center Oak Ridge Tennessee

关键词: Measurements;    Alloys;    Decay;    Electrons;    Lifetime;   

RP-ID  :  DE2004821378

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

Auger recombination in p-type GaSb, InAs and their alloys is enhanced due to the proximity of the bandgap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. They report electron lifetime measurements in a p-type 0.54-eV GaInAsSb alloy, commonly used in a variety of infrared devices. They have studied a series of double-capped heterostructures with varied thicknesses and doping levels, grown by organometallic vapor phase epitaxy on GaSb substrates. The Auger coefficient value of 2.3 x 10(sup -28) cm(sup 6)/s is determined by analyzing the photoluminescence decay constants with a systematic separation of different recombination mechanisms.