Electrical Characterization of Irradiated Portotype Silicon Pixel Sensors for BTeV.

Coluccia, M. R. ; Appel, J. A. ; Chiodini, G. ; Christian, D. C. ; Cihangir, S. ; Kwan, S. W. ; Sellberg, G.

Technical Information Center Oak Ridge Tennessee

关键词: Fermilab Tevatron;    Irradiation;    Silicon;    Hardness;    Protons;   

RP-ID  :  DE2003804444

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

The pixel detector in the BteV experiment at the Tevatron (Fermi Laboratory) is an important detector component for high-resolution tracking and vertex identification. For this task the hybrid pixel detector has to work in a very harsh radiation environment with up to 10(sup 14) minimum ionizing particles/cm(sup 2)/year. Radiation hardness of prototype n+/n/p+ silicon pixel sensors has been investigated. We present Electrical characterization curves for irradiated prototype n+/n/p+ sensors, intended for use in the BTeV experiment. We tested pixel sensors from various vendors and with two pixel isolation techniques: p-stop and p-spray. Results are based on irradiation with 200 MeV protons up to 6 x 10(sup 14) protons/cm(sup 2). because they provide very accurate space point information, intrinsically low noise, low occupancy due to large number of channel, better patter recognition capability (compared to strip detectors), high response speed, and high radiation hardness. We report here on the tolerance of hybrid silicon pixel components intended for use in the BTeV vertex detector.