Atomic Scale Structure of Ultrathin Magnetic Multilayers and Correlation with Resistance and Giant Magnetoresistance and Spin-Dependent Tunneling.

Butler, W. H.

Technical Information Center Oak Ridge Tennessee

关键词: Magnetic materials;    Magnetoresistance;    Memory devices;    Monitors;    Physical properties;   

RP-ID  :  DE2001777628

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

ORNL advanced characterization capabilities were used to determine the physical and chemical structure of magnetic multilayer films intended for application in non-volatile magnetic random access memory devices and as magnetic sensors. ORNL modeling capabilities were used to incorporate this information into a first-principles based tool that can be used to model the magnetic and transport properties of these films. This modeling capability should be useful for understanding and optimizing novel magnetoelectronic devices.