科技报告详细信息
Universal Bandgap Bowing in Group III Nitride Alloys. | |
Wu, J. ; Walukiewicz, W. ; Yu, K. M. ; Lu, H. ; Schaff, W. J. | |
Technical Information Center Oak Ridge Tennessee | |
关键词: Nitride alloys; Compositions; Energy gaps; Bandgap variations; Bandgap bowing; | |
RP-ID : DE2005835986 | |
学科分类:工程和技术(综合) | |
美国|英语 | |
来源: National Technical Reports Library | |
【 摘 要 】
The energy gaps of MBE-grown wurtzite-structure In(sub 1-x)Al(sub x)N alloys with x less than or equal to 0.25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of approximately 0.8 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and AlGaN, these results show a universal relationship between the bandgap variations of group III nitride alloys and their compositions.
【 预 览 】
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