Universal Bandgap Bowing in Group III Nitride Alloys.

Wu, J. ; Walukiewicz, W. ; Yu, K. M. ; Lu, H. ; Schaff, W. J.

Technical Information Center Oak Ridge Tennessee

关键词: Nitride alloys;    Compositions;    Energy gaps;    Bandgap variations;    Bandgap bowing;   

RP-ID  :  DE2005835986

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

The energy gaps of MBE-grown wurtzite-structure In(sub 1-x)Al(sub x)N alloys with x less than or equal to 0.25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of approximately 0.8 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and AlGaN, these results show a universal relationship between the bandgap variations of group III nitride alloys and their compositions.