Scanning Tunneling Microscopy Study of As/Ge(mnn) and P/Ge(mnn) Surfaces.

McMahon, W. E. ; Olson, J. M.

Technical Information Center Oak Ridge Tennessee

关键词: Arsines;    Surfaces;    Phosphine;    Germanium;    Annealing;   

RP-ID  :  DE2001772430

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

Ge(mnn) surfaces between (100) and (111) were annealed under either arsine or phosphine in a metal-organic chemical vapor deposition chamber, then imaged with a scanning tunneling microscope. In general, arsine-exposed Ge surfaces are facetted, while phosphine-exposed surfaces remain flat. For the arsine-exposed Ge surfaces, four stable facetting directions have been identified: (100), (11,3,3), (955), and (111).