A time of flight technique was used to study the carrier trapping time, t, and mobility, in various CdZnTe (CZT) radiation detectors. A new class of CZT crystals doped with various elements, grown by a modified Bridgman method at Yirmel Tech, were fabricated into detectors. The charge transport properties and performance were tested and compared with CZT detectors grown using the more mature high pressure method. The crystals under study were single crystal in nature some, being large volume. Both thermally evaporated and electroless gold contacts were used in the study. Carriers were generated near the surface of the detector by an (241)Am source producing a flood field of 5.5 MeV alpha particles. Voltage signals from generated electrons or holes were analyzed to determine the trapping time and mobility of carriers independently.