科技报告详细信息
H-Diffusion Mechanism(s) in PECVD Nitride Passivation of Si Solar Cells: Preprint. | |
Sopori, B. | |
Technical Information Center Oak Ridge Tennessee | |
关键词: Meetings; Hydrogen; Diffusion; Solar cells; Silicon; | |
RP-ID : DE200215000024 | |
学科分类:工程和技术(综合) | |
美国|英语 | |
来源: National Technical Reports Library | |
【 摘 要 】
Presented at the 2001 NCPV Program Review Meeting: Modeled diffusion of H in 2-step Si3N4 passivation process invoking concept of storage of H. H stored during nitridation is redistributed during subsequent anneal.
【 预 览 】
Files | Size | Format | View |
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DE200215000024.pdf | 227KB | download |