Sol-gel processing of La(sub 2)Zr(sub 2)O(sub 7) (LZO) was used to process buffer layers on biaxially textured Ni-3 at.%W substrates. A reel-to-reel continuous dip-coating unit was used to deposit the solution buffers. Epitaxial LZO films have been obtained through continuous processing on Ni-3 at.%W substrates with strong texture and uniform microstructure. The carbon content in these films were analyzed using proton resonance Rutherford Backscattering (RBS). The process parameters have been modified so as to study the effect of the carbon content in these films towards further growth of YBCO films with better properties. The LZO buffers were used as seed layers for RABiTS with the architecture of CeO(sub 2)/YSZ/LZO/Ni-3 at.%W, and YBCO films with critical current density (J(sub c)) of 1.9 MA/cm(sup 2) at 77K in self-field, and a J(sub c) of 0.34 MA/cm(sup 2) at 0.5 T, have been obtained.