Dielectric properties of ba(0.6)sr(0.4)tio(3) thin films with various strain states.

Park, B. ; Peterson, E.

Technical Information Center Oak Ridge Tennessee

关键词: Dielectric properties;    Strains;    Substrates;    Thin films;   

RP-ID  :  DE2001777450

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

We could systematically control the strain states of a Ba(sub 0.6)Sr(sub 0.4)TiO(sub 3) film by depositing a very thin Ba(sub 1(minus)x)Sr(sub x)TiO(sub 3) interlayer between the main layer of the Ba(sub 0.6)Sr(sub 0.4)TiO(sub 3) and a MgO(001) substrate. Ba(sub 0.6)Sr(sub 0.4)TiO(sub 3) films showed very strong dependence of dielectric properties on the strain states. The strain induced by the MgO substrate was relaxed faster than that induced by an interlayer.