Design of Materials for IR Detectors Using High Z Elements for High Energy Radiation Environment

Saraf, Sonali ; Cooper, Christopher ; Su, Ching Hua ; Choa, Fow-Sen ; Arnold, Bradley ; Cullum, Brian ; Sachs, David ; DiPaula, Philip ; Singh, N B

关键词: ADDITIVE MANUFACTURING;    AEROSPACE ENVIRONMENTS;    ATOMIC STRUCTURE;    CRYSTAL GROWTH;    ELECTRICAL RESISTIVITY;    ENERGY GAPS (SOLID STATE);    HIGH TEMPERATURE;    INFRARED DETECTORS;    INFRARED RADIATION;    LEAD SELENIDES;    MATHEMATICAL MODELS;    MORPHOLOGY;    OPERATING TEMPERATURE;    TECHNOLOGY UTILIZATION;    VAPORS;   

RP-ID  :  M19-7344

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来源: NASA Technical Reports Server

【 摘 要 】

There is a strong need for rad hard and high operating temperature IR detectors for space environment. Heavy metal Selenides (high Z and large density) have been investigated for more than half century for high operating temperature mid wave infrared (MWIR) applications. Most of the efforts have been devoted to make detector arrays on high-resistivity Si substrates for operating wavelengths in the 1.5 to 5.0 m region using physical vapor transport grown poly crystalline materials. For most of the biological spectral and imaging applications, short wave infrared (SWIR) detectors have shown better performance. Recent growth materials have shown variation in morphology with slight change in growth conditions and hence variation in performance parameters such as bandgap, mobility and resistivity from sample to sample. We have performed growth and optical characterization of binary materials CdSe-PbSe to determine the suitability for IR detector. We have determined bandgap using several theoretical models for different morphologies observed during growth on silicon wafers.