Modeling the Effect of Damage on the Electrical Resistivity of Melt-Infiltrated SiC/SiC Composites

Sullivan, Roy M ; Baker, Eric H ; Smith, Craig E ; Morscher, Gregory N

关键词: ELECTRICAL RESISTIVITY;    DAMAGE;    SILICON CARBIDES;    CERAMIC MATRIX COMPOSITES;    CRACK OPENING DISPLACEMENT;    FINITE ELEMENT METHOD;    ELECTRIC CURRENT;    CONCENTRIC CYLINDERS;    INFILTRATION;   

RP-ID  :  GRC-E-DAA-TN50915,E-19470,NASA/TM-2018-219757

学科分类：复合材料

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

Electrical resistivity (ER) measurements are a possible health monitoring technique for CMC components in future aerospace applications. In order to use ER measurements to detect and identify damage, it is necessary to understand how each specific damage state will affect the ER response. In this paper, finite element models are developed and applied to quantify the effect of specific damage states on the electrical resistivity response in a melt-infiltrated silicon carbide (SiC) fiber-reinforced silicon carbide composite. The electrical resistivity of several damage states are calculated by simulating the electric current flow through the damaged micro-structure. This is achieved by performing the numerical solution of the steady-state conservation of charge density equation. Numerical results reveal that cracking of the inter-tow matrix has the most profound effect on the composite electrical resistivity. Also, fiber/matrix debonding at matrix cracks in the 0° tows (tows aligned with the loading direction) may cause a significant increase in the electrical resistivity, but only if the fiber coating resistivity is 1000 Ω-cm or less. Cracks in the 90° tows and the crack opening displacement have very little effect on the composite electrical resistivity.