ULTRA-LOW-ENERGY HIGH-CURRENT ION SOURCE

Anders, Andre ; Yushkov, Georgy Yu. ; Baldwin, David A.

Lawrence Berkeley National Laboratory

关键词: Ion Sources;    Magnetrons;    Targets Ion Source, Low Energy, High Current, Gas, Semiconductor Processing;    Magnetic Fields;    Ion Source, Low Energy, High Current, Gas, Semiconductor Processing;   

DOI  :  10.2172/981525
RP-ID  :  LBNL-3026E
RP-ID  :  DE-AC02-05CH11231
RP-ID  :  981525

美国|英语

来源: UNT Digital Library

【 摘 要 】

The technical objective of the project was to develop an ultra-low-energy, high-intensity ion source (ULEHIIS) for materials processing in high-technology fields including semiconductors, micro-magnetics and optics/opto-electronics. In its primary application, this ion source can be incorporated into the 4Wave thin-film deposition technique called biased target ion-beam deposition (BTIBD), which is a deposition technique based on sputtering (without magnetic field, i.e., not the typical magnetron sputtering). It is a technological challenge because the laws of space charge limited current (Child-Langmuir) set strict limits of how much current can be extracted from a reservoir of ions, such as a suitable discharge plasma. The solution to the problem was an innovative dual-discharge system without the use of extraction grids.