Intrinsic Spin-Hall Effect in n-Doped Bulk GaAs

Bernevig, B.Andrei ; Zhang, Shou-Cheng ; /Stanford U., Phys. Dept.

Stanford Linear Accelerator Center

关键词: Other,Matsci;    L-S Coupling;    36 Materials Science;    Doped Materials Other,Matsci;    Hall Effect;   

DOI  :  10.2172/970443
RP-ID  :  SLAC-PUB-13909
RP-ID  :  AC02-76SF00515
RP-ID  :  970443

美国|英语

来源: UNT Digital Library

【 摘 要 】

We show that the bulk Dresselhauss (k{sup 3}) spin-orbit coupling term leads to an intrinsic spin-Hall effect in n-doped bulk GaAs, but without the appearance of uniform magnetization. The spin-Hall effect in strained and unstrained bulk GaAs has been recently observed experimentally by Kato et. al. [1]. We show that the experimental result is quantitatively consistent with the intrinsic spin-Hall effect due to the Dresselhauss term, when lifetime broadening is taken into account. On the other hand, extrinsic contribution to the spin-Hall effect is several orders of magnitude smaller than the observed effect.