Investigation of multi-layer thin films for energy storage.

Renk, Timothy Jerome ; Monson, Todd

Sandia National Laboratories

关键词: 36 Materials Science;    Energy Storage.;    Dielectric Materials;    Energy Density;    Oxides;   

DOI  :  10.2172/947371
RP-ID  :  SAND2009-0191
RP-ID  :  AC04-94AL85000
RP-ID  :  947371

美国|英语

来源: UNT Digital Library

【 摘 要 】

We investigate here the feasibility of increasing the energy density of thin-film capacitors by construction of a multi-layer capacitor device through ablation and redeposition of the capacitor materials using a high-power pulsed ion beam. The deposition experiments were conducted on the RHEPP-1 facility at Sandia National Laboratories. The dielectric capacitor filler material was a composition of Lead-Lanthanum-Zirconium-Titanium oxide (PLZT). The energy storage can be increased by using material of intrinsically high dielectric constant, and constructing many thin layers of this material. For successful device construction, there are a number of challenging requirements including correct stoichiometric and crystallographic composition of the deposited PLZT. This report details some success in satisfying these requirements, even though the attempt at device manufacture was unsuccessful. The conclusion that 900 C temperatures are necessary to reconstitute the deposited PLZT has implications for future manufacturing capability.