Synthesis of silicon and germanium nanowires.

Clement, Teresa J. (Arizona State University) ; Hsu, Julia W. P.

Sandia National Laboratories

关键词: 77 Nanoscience And Nanotechnology;    Precursor;    Nanowires.;    Quantum Wires;    Gases.;   

DOI  :  10.2172/945179
RP-ID  :  SAND2007-6795
RP-ID  :  AC04-94AL85000
RP-ID  :  945179

美国|英语

来源: UNT Digital Library

【 摘 要 】

The vapor-liquid-solid growth process for synthesis of group-IV semiconducting nanowires using silane, germane, disilane and digermane precursor gases has been investigated. The nanowire growth process combines in situ gold seed formation by vapor deposition on atomically clean silicon (111) surfaces, in situ growth from the gaseous precursor(s), and real-time monitoring of nanowire growth as a function of temperature and pressure by a novel optical reflectometry technique. A significant dependence on precursor pressure and growth temperature for the synthesis of silicon and germanium nanowires is observed, depending on the stability of the specific precursor used. Also, the presence of a nucleation time for the onset of nanowire growth has been found using our new in situ optical reflectometry technique.