Simulation of neutron radiation damage in silicon semiconductor devices.

Shadid, John Nicolas ; Hoekstra, Robert John ; Hennigan, Gary Lee ; Castro, Joseph Pete Jr. ; Fixel, Deborah A.

Sandia National Laboratories

关键词: Silicon-Defects.;    Silicon.;    Semiconductors-Defects.;    Semiconductor Devices;    Computers;   

DOI  :  10.2172/934581
RP-ID  :  SAND2007-7157
RP-ID  :  AC04-94AL85000
RP-ID  :  934581

美国|英语

来源: UNT Digital Library

【 摘 要 】

A code, Charon, is described which simulates the effects that neutron damage has on silicon semiconductor devices. The code uses a stabilized, finite-element discretization of the semiconductor drift-diffusion equations. The mathematical model used to simulate semiconductor devices in both normal and radiation environments will be described. Modeling of defect complexes is accomplished by adding an additional drift-diffusion equation for each of the defect species. Additionally, details are given describing how Charon can efficiently solve very large problems using modern parallel computers. Comparison between Charon and experiment will be given, as well as comparison with results from commercially-available TCAD codes.