GeSi strained nanostructure self-assembly for nano- and opto-electronics.

Means, Joel L. ; Floro, Jerrold Anthony

Sandia National Laboratories

关键词: Nanostructures;    Self-Assembly.;    Quantum Wires Optoelectronic Devices.;    Optoelectronics-Materials;    Functionals;   

DOI  :  10.2172/889001
RP-ID  :  SAND2005-0101
RP-ID  :  AC04-94AL85000
RP-ID  :  889001

美国|英语

来源: UNT Digital Library

【 摘 要 】

Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot towards the fabrication of more complex, potentially functional structures such as quantum dot molecules and quantum wires. This report summarizes the steps taken to improve the growth quality of our GeSi molecular beam epitaxy process, and then highlights the outcomes of this effort.