Growth of Uniform Ga{sub 1-x}In{sub x}Sb Bulk Crystals by Self-Solute Feeding Technique

Dutta, P.S. ; Rajagopalan, G. ; Gutmann, R.J. ; Nichols, G.

Lockheed Martin

关键词: 42 Engineering;    Alloys;    Feeding;    Solutes;   

DOI  :  10.2172/821861
RP-ID  :  LM-02K074
RP-ID  :  AC12-00SN39357
RP-ID  :  821861

美国|英语

来源: UNT Digital Library

【 摘 要 】

Compositionally homogeneous, crack-free bulk crystals of Ga{sub 1-x}In{sub x}Sb with x as high as 0.4 has been grown for the first time using a self-solute feeding method. A balance between the growth rate and the spacing between the solute and the growth interface has been found to be crucial in maintaining uniform alloy composition.