In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption

Vineis, C.J. ; Wang, C.A. ; Jensen, K.F.

Lockheed Martin

关键词: Desorption;    10 Synthetic Fuels;    Monitoring;    Recommendations;    Water;   

DOI  :  10.2172/821306
RP-ID  :  LM-00K070
RP-ID  :  AC12-00SN39357
RP-ID  :  821306

美国|英语

来源: UNT Digital Library

【 摘 要 】

The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions were investigated. HCL was used as the etchant, and in certain cases was followed by an additional etch in Br{sub 2}-HCl-HNO{sub 3}-CH{sub 3}COOH for comparison. Rinse comparisons included 2-propanol, methanol, and deionized water. Substrates were heated to either 525, 550, or 575 C. Features observed in the in-situ reflectance associated with the oxide desorption process were interpreted based on the starting oxide chemistry and thickness. Based on in-situ reflectance and ex-situ atomic force microscopy data, a recommendation on a reproducible GaSb substrate preparation technique suitable for high-quality epitaxial growth is suggested.