In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption | |
Vineis, C.J. ; Wang, C.A. ; Jensen, K.F. | |
Lockheed Martin | |
关键词: Desorption; 10 Synthetic Fuels; Monitoring; Recommendations; Water; | |
DOI : 10.2172/821306 RP-ID : LM-00K070 RP-ID : AC12-00SN39357 RP-ID : 821306 |
|
美国|英语 | |
来源: UNT Digital Library | |
【 摘 要 】
The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions were investigated. HCL was used as the etchant, and in certain cases was followed by an additional etch in Br{sub 2}-HCl-HNO{sub 3}-CH{sub 3}COOH for comparison. Rinse comparisons included 2-propanol, methanol, and deionized water. Substrates were heated to either 525, 550, or 575 C. Features observed in the in-situ reflectance associated with the oxide desorption process were interpreted based on the starting oxide chemistry and thickness. Based on in-situ reflectance and ex-situ atomic force microscopy data, a recommendation on a reproducible GaSb substrate preparation technique suitable for high-quality epitaxial growth is suggested.
【 预 览 】
Files | Size | Format | View |
---|---|---|---|
821306.pdf | 4909KB | download |