A Simple Single Step diffusion and Emitter Etching Process for High Efficiency Gallium Antimonide Thermophotovoltaic Devices

Rajagopalan, G. ; Reddy, N.S. ; Ehsani, E. ; Bhat, I.B. ; Dutta, P.S. ; Gutmann, R.J. ; Nichols, G. ; Charache, G.W. ; Sulima, O.

Lockheed Martin Inc., Schenectady, NY 12301-1072 (United States)

关键词: Diffusion;    Monitoring;    Gallium Antimonides;    Gasb, Zn Diffusion, Thermophotovoltaic Device;    Etching;   

DOI  :  10.2172/820719
RP-ID  :  LM-02K072
RP-ID  :  AC12-00SN39357
RP-ID  :  820719

美国|英语

来源: UNT Digital Library

【 摘 要 】

A single step diffusion followed by precise etching of the diffused layer has been developed to obtain a diffusion profile appropriate for high efficiency GaSb thermophotovoltaic cells. The junction depth was controlled through monitoring of light current-voltage (I-V) curves (photovoltaic response) during the post diffusion emitter etching process. The measured photoresponses (prior to device fabrication) have been correlated with the quantum efficiencies and the open circuit voltages in the fabricated devices. An optimum junction depth for obtaining highest quantum efficiency and open circuit voltage is presented based on diffusion lengths (or monitoring carrier lifetimes), carrier mobility and typical diffused impurity profile in GaSb.