CIS-Type PV Device Fabrication by Novel Techniques; Phase II Subcontract Report 1 July 1999--31 June 2000

Fisher, M.L. ; Kapur, V.K. (International Solar Electric Technology, Inc.)

National Renewable Energy Laboratory (U.S.)

关键词: Research Programs;    Alloys;    Non-Vacuum Processing Route;    36 Materials Science;    Thin Films Photovoltaics;   

DOI  :  10.2172/776184
RP-ID  :  NREL/SR-520-29606
RP-ID  :  AC36-99GO10337
RP-ID  :  776184

美国|英语

来源: UNT Digital Library

【 摘 要 】

The R and D program at ISET is centered on development of a novel, dispersion-based route to the deposition of precursor thin films that are converted to CIS-type absorbers through high temperature reactions at or close to atmospheric pressure. The goal of the current research program at ISET is to bring a non-vacuum processing route for CIS closer to commercialization by improving the device efficiency through an increase in absorber bandgap. The basic processing approach involves first synthesizing a powder containing the oxides of copper, indium and gallium. A dispersion (ink) is prepared from the starting powder by mechanical milling or sonication. This ink is then deposited onto the glass/moly substrate as a thin precursor (3-4 {micro}m) and converted to a metallic alloy film by reaction in a hydrogen atmosphere. Controlled synthesis of starting powders and proper reduction results in reasonably smooth, metallic precursor films similar to those produced by sputtering or evaporation. From this point the processing is similar to that in the other two-stage techniques, with the metallic film being reacted in H2Se to form the final photovoltaic absorber, followed by CdS and TCO deposition.