Advanced laser diodes for sensing applications

VAWTER,GREGORY A. ; MAR,ALAN ; CHOW,WENG W. ; ALLERMAN,ANDREW A.

Sandia National Laboratories

关键词: Emission Spectra;    Semiconductor Lasers;    Laser Radiation;    42 Engineering;    Uses;   

DOI  :  10.2172/752016
RP-ID  :  SAND2000-0112
RP-ID  :  AC04-94AL85000
RP-ID  :  752016

美国|英语

来源: UNT Digital Library

【 摘 要 】

The authors have developed diode lasers for short pulse duration and high peak pulse power in the 0.01--100.0 m pulsewidth regime. A primary goal of the program was producing up to 10 W while maintaining good far-field beam quality and ease of manufacturability for low cost. High peak power, 17 W, picosecond pulses have been achieved by gain switching of flared geometry waveguide lasers and amplifiers. Such high powers area world record for this type of diode laser. The light emission pattern from diode lasers is of critical importance for sensing systems such as range finding and chemical detection. They have developed a new integrated optical beam transformer producing rib-waveguide diode lasers with a symmetric, low divergence, output beam and increased upper power limits for irreversible facet damage.