Stable a-Si:H-Based Multijunction Solar Cells with Guidance from Real-Time Optics: Final Report, 17 July 1998--16 November 2001

Wronski, C. R. ; Collins, R. W. ; Pearce, J. M. ; Koval, R. J. ; Ferlauto, A. S. ; Ferreira, G. M. ; C., Chen

National Renewable Energy Laboratory (U.S.)

关键词: Amorphous Silicon;    Pv;    14 Solar Energy;    Thin Films Pv;    Phase Diagrams;   

DOI  :  10.2172/15000849
RP-ID  :  NREL/SR-520-32692
RP-ID  :  AC36-99-GO10337
RP-ID  :  15000849

美国|英语

来源: UNT Digital Library

【 摘 要 】

This report describes the new insights obtained into the growth of hydrogenated silicon (Si:H) films via real-time spectroscopic ellipsometry (RTSE) measurements. Evolutionary phase diagrams were expanded to include the effects of different deposition conditions, including rf power, pressure, and temperature. Detailed studies of degradation kinetics in thin films and corresponding solar cells have been carried out. Both p-i-n and n-i-p solar cells that incorporate Si:H i-layers deposited with and without H2-dilution have been studied. For the first time, direct and reliable correlations have been obtained between the light-induced changes in thin-film materials and the degradation of the corresponding solar cells.