Comparison of Minority Carrier Lifetime Measurements in Superstrate and Substrate CdTe PV Devices: Preprint | |
Gessert, T. A. ; Dhere, R. G. ; Duenow, J. N. ; Kuciauskas, D. ; Kanevce, A. ; Bergeson, J. D. | |
National Renewable Energy Laboratory (U.S.) | |
关键词: Mcl; 14 Solar Energy; Decay; Pv; Trpl; | |
DOI : 10.2172/1026571 RP-ID : NREL/CP-5200-50747 RP-ID : AC36-08GO28308 RP-ID : 1026571 |
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美国|英语 | |
来源: UNT Digital Library | |
【 摘 要 】
We discuss typical and alternative procedures to analyze time-resolved photoluminescence (TRPL) measurements of minority carrier lifetime (MCL) with the hope of enhancing our understanding of how this technique may be used to better analyze CdTe photovoltaic (PV) device functionality. Historically, TRPL measurements of the fast recombination rate (t1) have provided insightful correlation with broad device functionality. However, we have more recently found that t1 does not correlate as well with smaller changes in device performance, nor does it correlate well with performance differences observed between superstrate and substrate CdTe PV devices. This study presents TRPL data for both superstrate and substrate CdTe devices where both t1 and the slower TRPL decay (t2) are analyzed. The study shows that changes in performance expected from small changes in device processing may correlate better with t2. Numerical modeling further suggests that, for devices that are expected to have similar drift field in the depletion region, effects of changes in bulk MCL and interface recombination should be more pronounced in t2. Although this technique may provide future guidance to improving CdS/CdTe device performance, it is often difficult to extract statistically precise values for t2, and therefore t2 data may demonstrate significant scatter when correlated with performance parameters.
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