Advanced atom chips with two metal layers.

Stevens, James E. ; Blain, Matthew Glenn ; Benito, Francisco M. ; Biedermann, Grant

Sandia National Laboratories

关键词: Layers;    Traps;    77 Nanoscience And Nanotechnology;    Resonators;    Atoms;   

DOI  :  10.2172/1005059
RP-ID  :  SAND2010-8586
RP-ID  :  AC04-94AL85000
RP-ID  :  1005059

美国|英语

来源: UNT Digital Library

【 摘 要 】

A design concept, device layout, and monolithic microfabrication processing sequence have been developed for a dual-metal layer atom chip for next-generation positional control of ultracold ensembles of trapped atoms. Atom chips are intriguing systems for precision metrology and quantum information that use ultracold atoms on microfabricated chips. Using magnetic fields generated by current carrying wires, atoms are confined via the Zeeman effect and controllably positioned near optical resonators. Current state-of-the-art atom chips are single-layer or hybrid-integrated multilayer devices with limited flexibility and repeatability. An attractive feature of multi-level metallization is the ability to construct more complicated conductor patterns and thereby realize the complex magnetic potentials necessary for the more precise spatial and temporal control of atoms that is required. Here, we have designed a true, monolithically integrated, planarized, multi-metal-layer atom chip for demonstrating crossed-wire conductor patterns that trap and controllably transport atoms across the chip surface to targets of interest.