Analytical models for total dose ionization effects in MOS devices.

Campbell, Phillip Montgomery ; Bogdan, Carolyn W.

Sandia National Laboratories

关键词: Trapping;    Aging;    Interfaces;    Electric Potential;    Mobility;   

DOI  :  10.2172/1002109
RP-ID  :  SAND2008-5112
RP-ID  :  AC04-94AL85000
RP-ID  :  1002109

美国|英语

来源: UNT Digital Library

【 摘 要 】

MOS devices are susceptible to damage by ionizing radiation due to charge buildup in gate, field and SOI buried oxides. Under positive bias holes created in the gate oxide will transport to the Si / SiO{sub 2} interface creating oxide-trapped charge. As a result of hole transport and trapping, hydrogen is liberated in the oxide which can create interface-trapped charge. The trapped charge will affect the threshold voltage and degrade the channel mobility. Neutralization of oxidetrapped charge by electron tunneling from the silicon and by thermal emission can take place over long periods of time. Neutralization of interface-trapped charge is not observed at room temperature. Analytical models are developed that account for the principal effects of total dose in MOS devices under different gate bias. The intent is to obtain closed-form solutions that can be used in circuit simulation. Expressions are derived for the aging effects of very low dose rate radiation over long time periods.