科技报告详细信息
Low-voltage Si-Ge Avalanche photodiode | |
Huang, Zhihong ; Liang, Di ; Santori, Charles ; Fiorentino, Marco ; Beausoleil, Raymond G. | |
HP Development Company | |
关键词: APD; low voltage; | |
RP-ID : HPL-2015-28 | |
学科分类:计算机科学(综合) | |
美国|英语 | |
来源: HP Labs | |
【 摘 要 】
Here we report a Si-Ge avalanche photodiode (APD) with a breakdown voltage of only -10V. The highest measured bandwidth is 15.8GHz for a 20µm diameter device. A bandwidth of 13.2 GHz at gain of 22.2 is obtained for the same device, giving a 290GHz gain-bandwidth product at 1550nm wavelength.
【 预 览 】
Files | Size | Format | View |
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RO201804100000755LZ | 244KB | download |