T-Shaped Emitter Metal Structures for HBTs

Malik, Roger ; Smith, Peter ; Rodwell, Mark ; Echternach, Pierre ; Griffith, Zack ; Muller, Richard ; Martin, Suzanne ; Paidi, Vamsi ; Samoska, Lorene ; Siegel, Peter ; Urteaga, Miguel ; Fung, King Man ; Velebir, James

PID  :  NTRS Document ID: 20100025730
RP-ID  :  NPO-41034

学科分类：电子与电气工程

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来源: NASA Technical Reports Server

【 摘 要 】

Metal emitter structures in a class of developmental InP-based high-speed heterojunction bipolar transistors (HBTs) have been redesigned to have T-shaped cross sections. T-cross-section metal features have been widely used in Schottky diodes and high-electron-mobility transistors, but not in HBTs. As explained, the purpose served by the present T cross-sectional shapes is to increase fabrication yields beyond those achievable with the prior cross-sectional shapes.