X-Ray Diffraction Wafer Mapping Method for Rhombohedral Super-Hetero-Epitaxy

Elliott, James R. ; Choi, Sang Hyouk ; King, Glen C. ; Dimarcantonio, Albert L. ; Park, Yoonjoon

PID  :  NTRS Document ID: 20100029737

学科分类：物理（综合）

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

A new X-ray diffraction (XRD) method is provided to acquire XY mapping of the distribution of single crystals, poly-crystals, and twin defects across an entire wafer of rhombohedral super-hetero-epitaxial semiconductor material. In one embodiment, the method is performed with a point or line X-ray source with an X-ray incidence angle approximating a normal angle close to 90 deg, and in which the beam mask is preferably replaced with a crossed slit. While the wafer moves in the X and Y direction, a narrowly defined X-ray source illuminates the sample and the diffracted X-ray beam is monitored by the detector at a predefined angle. Preferably, the untilted, asymmetric scans are of {440} peaks, for twin defect characterization.