Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

Meredith Roger D. ; Krasowski, Michael J. ; Neudeck, Philip G. ; Spry, David J. ; Beheim, Glenn M. ; Prokop, Norman F. ; Ferrier, Terry L. ; Okojie, Robert S. ; Chen, Liang-Yu ; Chang, Carl W. ; Evans, Laura J.

PID  :  NTRS Document ID: 20150022217
RP-ID  :  1069-D11-02
RP-ID  :  GRC-WO-667837

学科分类：电子与电气工程

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

NASA has been developing very high temperature semiconductor integrated circuits for use in the hot sections of aircraft engines and for Venus exploration. This paper reports on long-term 500 C electrical operation of prototype 6H-SiC integrated circuits based on epitaxial 6H-SiC junction field effect transistors (JFETs). As of this writing, some devices have surpassed 4000 hours of continuous 500 C electrical operation in oxidizing air atmosphere with minimal change in relevant electrical parameters.