Silicon Technologies Adjust to RF Applications

Reinecke Taub, Susan ; Alterovitz, Samuel A.

PID  :  NTRS Document ID: 20150022253
RP-ID  :  E-9322

学科分类：物理（综合）

美国|英语

来源: NASA Technical Reports Server

【 摘 要 】

Silicon (Si), although not traditionally the material of choice for RF and microwave applications, has become a serious challenger to other semiconductor technologies for high-frequency applications. Fine-line electron- beam and photolithographic techniques are now capable of fabricating silicon gate sizes as small as 0.1 micron while commonly-available high-resistivity silicon wafers support low-loss microwave transmission lines. These advances, coupled with the recent development of silicon-germanium (SiGe), arm silicon integrated circuits (ICs) with the speed required for increasingly higher-frequency applications.