FY06 Annual Report: Amorphous Semiconductors for Gamma Radiation Detection (ASGRAD)

Johnson, Bradley R. ; Riley, Brian J. ; Crum, Jarrod V. ; Sundaram, S. K. ; Henager, Charles H. ; Zhang, Yanwen ; Shutthanandan, V.

关键词: AMBIENT TEMPERATURE;    BACKSCATTERING;    DESIGN;    DETECTION;    ELECTRICAL TESTING;    FABRICATION;    GAMMA DETECTION;    GAMMA RADIATION;    HALL EFFECT;    KINETICS;    MONOCRYSTALS;    OPTICAL MICROSCOPY;    POLISHING;    SCANNING ELECTRON MICROSCOPY;    SPECTROSCOPY;   

DOI  :  10.2172/1047430
RP-ID  :  PNNL-16429
PID  :  OSTI ID: 1047430
Others  :  Other: 19197
Others  :  NN2001000
Others  :  TRN: US201216%%395

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

We describe progress in the development of new materials for portable, room-temperature, gamma-radiation detection at Pacific Northwest National Laboratory at the Hanford Site in Washington State. High Z, high resistivity, amorphous semiconductors are being designed for use as solid-state detectors at near ambient temperatures; principles of operation are analogous to single-crystal semiconducting detectors. Amorphous semiconductors have both advantages and disadvantages compared to single crystals, and this project is developing methods to mitigate technical problems and design optimized material for gamma detection. Several issues involved in the fabrication of amorphous semiconductors are described, including reaction thermodynamics and kinetics, the development of pyrolytic coating, and the synthesis of ingots. The characterization of amorphous semiconductors is described, including sectioning and polishing protocols, optical microscopy, X-ray diffraction, scanning electron microscopy, optical spectroscopy, particle-induced X-ram emission, Rutherford backscattering, and electrical testing. Then collaboration with the University of Illinois at Urbana-Champaign is discussed in the areas of Hall-effect measurements and current voltage data. Finally, we discuss the strategy for continuing the program.