Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel

Ruden, P. P.¹  Smith, Darryl L.² 

[1] Univ. of Minnesota, Minneapolis, MN (United States);Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

DOI  :  10.2172/1304691
RP-ID  :  LA-UR--07-2264
PID  :  OSTI ID: 1304691

学科分类：凝聚态物理

美国|英语

来源: SciTech Connect

【 摘 要 】

We present a device model for light-emitting, ambipolar, organic field-effect transistors based on the gradual channel approximation. The model results are in very good agreement with recent experimental data. Trapping of injected carriers in localized states in the channel region is shown to be an important mechanism that can strongly affect the transfer characteristics and the light emission of these devices.