High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

R. Farrell ; V. R. Pagan ; A. Kabulski ; Sridhar Kuchibhatl ; J. Harman ; K. R. Kasarla ; L. E. Rodak ; P. Famouri ; J. Peter Hensel ; D. Korakakis

关键词: ALUMINIUM;    ANNEALING;    FURNACES;    LASERS;    NITRIDES;    OXIDATION;    THIN FILMS;   

DOI  :  10.2172/1015474
RP-ID  :  NETL-TPR-2009
PID  :  OSTI ID: 1015474
Others  :  TRN: US201113%%92

学科分类：社会科学、人文和艺术（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.