Heteroepitaxial Growth of NSMO on Silicon by Pulsed Laser Deposition

Kolagani, R ; Friedrich, S

关键词: BUFFERS;    CHEMICAL REACTIONS;    DEPOSITION;    EPITAXY;    LASERS;    LAWRENCE LIVERMORE NATIONAL LABORATORY;    SILICON;    STRAINS;   

DOI  :  10.2172/945832
RP-ID  :  LLNL-TR-405017
PID  :  OSTI ID: 945832
Others  :  TRN: US200904%%168

美国|英语

来源: SciTech Connect

【 摘 要 】

The following is the optimized pulsed laser deposition (PLD) procedure by which we prepared the final samples that were sent to LLNL. These samples are epitaxial multilayer structures of Si/YSZ/CeO/NSMO, where the abbreviations are explained in the following table. In this heterostructure, YSZ serves as a buffer layer to prevent deleterious chemical reactions, and also serves to de-oxygenate the amorphous SiO{sub 2} layer to generate a crystalline template for epitaxy. CeO and BTO serve as template layers to minimize the effects of thermal and lattice mismatch strains, respectively. More details on the buffer and template layer scheme are included in the manuscript [Yong et al., 2008] attached to this report.