Determination of late-time Gamma-Ray (60Co) sensitivity of single diffusion Lot 2N2222A transistors.

DePriest, Kendall Russell ; Kajder, Karen C. ; Peters, Curtis D. (American Staff Augmentation Providers, LLC, Albuquerque, NM)

关键词: DIFFUSION;    INTEGRATED CIRCUITS;    IRRADIATION;    NEUTRONS;    SANDIA NATIONAL LABORATORIES;    SENSITIVITY;    SHUTDOWN;    SIMULATION;    TRANSISTORS Electronic circuits.;    Power transistors.;    Transistors.;    Sandia National Laboratories;    Gamma Irradiation Facility;   

DOI  :  10.2172/940518
RP-ID  :  SAND2008-5253
PID  :  OSTI ID: 940518
Others  :  TRN: US0807202

学科分类：物理（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

Sandia National Laboratories (SNL) has embarked on a program to develop a methodology to use damage relations techniques (alternative experimental facilities, modeling, and simulation) to understand the time-dependent effects in transistors (and integrated circuits) caused by neutron irradiations in the Sandia Pulse Reactor-III (SPR-III) facility. The development of these damage equivalence techniques is necessary since SPR-III was shutdown in late 2006. As part of this effort, the late time {gamma}-ray sensitivity of a single diffusion lot of 2N2222A transistors has been characterized using one of the {sup 60}Co irradiation cells at the SNL Gamma Irradiation Facility (GIF). This report summarizes the results of the experiments performed at the GIF.