Novel High Efficiency Photovoltaic Devices Based on the III-N Material System: Final Technical Report, 7 December 2005 - 29 August 2008

Hornsberg, C. ; Doolittle, W. A. ; Ferguson, I.

关键词: EFFICIENCY;    OPTIMIZATION;    SIMULATION;    SOLAR CELLS PV;    HIGH EFFICIENCY;    DEVICES;    SOLAR CELLS;    BANDGAP;    OPEN-CIRCUIT VOLTAGE;    OHMIC CONTACT;    OPTIMIZATION;    INGAN;    PHASE SEPARATION;    Solar Energy - Photovoltaics;   

DOI  :  10.2172/940680
RP-ID  :  NREL/SR-520-44186
PID  :  OSTI ID: 940680
Others  :  Other: XEJ-6-55157-01
Others  :  TRN: US200824%%292

美国|英语

来源: SciTech Connect

【 摘 要 】

The research shows that InGaN material system can be used to realize high-efficiency solar cells, making contributions to growth, modeling, understanding of loss mechanisms, and process optimization.