Technical Progress Report for "Optical and Electrical Properties of III-Nitrides and Related Materials"

Jiang, Hongxing

关键词: ALLOYS;    ELECTRICAL PROPERTIES;    PROGRESS REPORT III-Nitrides;    AIGaN Alloys;    bandgap;    exciton localization;    cation vacancies;    n-type conductivity control;    Growth and phtoluminescence studies of Zn-doped AIN epilayers;    high crystalline quality AIN epilayer growth technology;   

DOI  :  10.2172/950507
RP-ID  :  DOE/ER/45604
PID  :  OSTI ID: 950507
Others  :  TRN: US201002%%1162

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

Investigations have been conducted focused on the fundamental material properties of AIN and high AI-content AIGaN alloys and further developed MOCVD growth technologies for obtaining these materials with improved crystalline quality and conductivities.