Full Field Birefringence Measurement of Grown-In Stresses in Thin Silicon Sheet: Final Technical Report, 2 January 2002 - 15 January 2008

Danyluk, S. ; Ostapenka, S.

关键词: ACOUSTICS;    BIREFRINGENCE;    LIGHT TRANSMISSION;    SILICON;    STRESSES PV;    FULL-FIELD BIREFRINGENCE;    RESIDUAL STRESS;    SILICON SHEET;    INFRARED PHOTOELASTICITY;    SILICON WAFER;    CRACK DETECTION;    RESONANCE ULTRASONIC VIBRATION;    Solar Energy - Photovoltaics;   

DOI  :  10.2172/941480
RP-ID  :  NREL/SR-520-44237
PID  :  OSTI ID: 941480
Others  :  Other: AAT-2-31605-06
Others  :  TRN: US200825%%609

美国|英语

来源: SciTech Connect

【 摘 要 】

This paper summarizes polariscopy work that led to prototype non-contact, near-infrared light-transmission system for inspecting thin, flat, large-area Si wafers. Acoustic work led to commercially viable system to inspect wafers for microcracks.